| Original Articles |
|
|
|
|
Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure
|
| LUO Ke-jian;ZHENG Hou-zhi;ZHANG Ting;LI Cheng-fang;YANG Xiao-ping;ZHANG Peng-hua;ZHANG Wei;TIAN Jin-fa |
| National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
|
| Cite this article: |
|
LUO Ke-jian, ZHENG Hou-zhi, ZHANG Ting et al 1996 Chin. Phys. Lett. 13 707-710 |
|
|
|
Abstract Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy. Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime, while it increases remarkably with bias voltages beyond resonant regime. The optical results are in good agreement with the electrical measurement. It is demonstrated that the band gap renormalization plays a certain role in the experiment.
|
| Keywords:
73.40.Gk
72.20.Jv
72.80.Ey
|
|
|
Published: 01 September 1996
|
|
| PACS: |
73.40.Gk
|
(Tunneling)
|
| |
72.20.Jv
|
(Charge carriers: generation, recombination, lifetime, and trapping)
|
| |
72.80.Ey
|
(III-V and II-VI semiconductors)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
