Chin. Phys. Lett.  1996, Vol. 13 Issue (8): 613-616    DOI:
Original Articles |
Growth and Luminescence of SiGe Self-organized Dots
CHEN Hong;XIE Xiao-gang;CHENG Wen-qin;HUANG Qi;ZHOU Jun-ming
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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CHEN Hong, XIE Xiao-gang, CHENG Wen-qin et al  1996 Chin. Phys. Lett. 13 613-616
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Abstract It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the silicon layer during the growth of strained SiGe/Si rnultilayers on a Si (001) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than the indirect band-gap of Si, and the luminescence of the quantum dots exceeds that of quantum well by three orders of magnitude. This can be attributed to an indirect-to-direct band-gap conversion in the SiGe dots.
Keywords: 68.55.-a      81.15.-z     
Published: 01 August 1996
PACS:  68.55.-a (Thin film structure and morphology)  
  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1996/V13/I8/0613
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CHEN Hong
XIE Xiao-gang
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