Thermal Conductivity of Diamond-Based Silicon-on-Insulator Structures

Chin. Phys. Lett.

1996, Vol. 13

Issue (8): 610-612 DOI:

Original Articles

Thermal Conductivity of Diamond-Based Silicon-on-Insulator Structures

GU Chang-zhi;JIN Zeng-sun;LU Xiang-yi;ZOU Guang-tian;LU Jian-xia¹;YAO Da¹;ZHANG Ji-fa²;FANG Rong-chuan²

State key Laboratory of Superhard Materials, Jilin University, Changchun 130023 ¹Institute of Northeast Microelectron, Shenyang 110032 ²Department of Physics, University of Science and Technology of China, Hefei 230026

Cite this article:

GU Chang-zhi, JIN Zeng-sun, LU Xiang-yi et al 1996 Chin. Phys. Lett. 13 610-612

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Abstract Diamond films of various thickness (1-300μm) were deposited on single-crystal Si active (300 μm) by a microwave plasma chemical vapor deposition method using gaseous mixtures of methane and hydrogen. After thinning of the Si layer by machine and ion-beam polishing a diamond-based silicon-on-insulator structure with final Si layer thickness of about 1μm is formed. Thermal conductivity of this structure material with various thicknesses of diamond and Si layer was measured. Compared with bulk silicon, the thermal conductivity of the siliconon-diamond structure with 300μm diamond and 1μm silicon increases by 850%.

Keywords: 65.70.+y 81.15.Gh 81.40.-z

Published: 01 August 1996

PACS:	65.70.+y
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.40.-z	(Treatment of materials and its effects on microstructure, nanostructure, And properties)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I8/0610

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	GU Chang-zhi
	JIN Zeng-sun
	LU Xiang-yi
	ZOU Guang-tian
	LU Jian-xia
	YAO Da
	ZHANG Ji-fa
	FANG Rong-chuan

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