Chin. Phys. Lett.  1996, Vol. 13 Issue (7): 557-560    DOI:
Original Articles |
Nucleation Mechanism of Polycrystalline Diamond Film Deposited on Ceramic Alumina by Microwave Plasma Chemical Vapor Deposition
XIA Yi-ben;MO Yao-wu;WANG Yu;HUANG Xiao-qin;CHEN Da-ming;WANG Hong
College of Materials Science and Engineering, Shanghai University, Shanghai 201800
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XIA Yi-ben, MO Yao-wu, WANG Yu et al  1996 Chin. Phys. Lett. 13 557-560
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Abstract Polycrystalline diamond films have been deposited on ceramic alumina substrates by microwave plasma chemical vapor deposition method. Variation of the emission spectra in the microwave plasma with the microwave power and the vapor pressure in the reaction chamber is studied, respectively. Relationships between the hydrogen atomic spectra and the average energy of the electrons in the plasma, as well as the mechanism of diamond film deposition on ceramic alumina are discussed.
Keywords: 81.15.Gh      61.50.Cj      68.55.-a     
Published: 01 July 1996
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  61.50.Cj  
  68.55.-a (Thin film structure and morphology)  
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XIA Yi-ben
MO Yao-wu
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HUANG Xiao-qin
CHEN Da-ming
WANG Hong
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