Electrical Characteristics of Metal Contacts to Boron Doped
Polycrystalline Semiconducting Diamond Thin Films

Chin. Phys. Lett.

1996, Vol. 13

Issue (7): 541-544 DOI:

Original Articles

Electrical Characteristics of Metal Contacts to Boron Doped Polycrystalline Semiconducting Diamond Thin Films

LIU Xing-zhao;YANG Bang-chao;JIA Yu-min;LI Yan-rong

University of Electronic Science and Technology of China, Chengdu 610054

Cite this article:

LIU Xing-zhao, YANG Bang-chao, JIA Yu-min et al 1996 Chin. Phys. Lett. 13 541-544

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Abstract Low resistance ohmic contacts have been fabricated on chemical vapor deposition grown polycrystalline B doped semiconducting diamond thin films by thermally activated solid state reaction process. A bilayer metallization of Ti/Au was employed. After annealing at 820°C for 10min in Ar atmosphere, the specific contact resistance of 2 x 10^-4 Ω.cm² has been obtained. The properties of the diamond/Ti interfaces have been characterized by using x-rays diffraction and scanning electron microscopy. The performance of semiconducting diamond thin film thermistors has been reported.

Keywords: 73.40.Ns 68.35. -p 73.40.Cg

Published: 01 July 1996

PACS:	73.40.Ns	(Metal-nonmetal contacts)
	68.35. -p
	73.40.Cg	(Contact resistance, contact potential)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I7/0541

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	LIU Xing-zhao
	YANG Bang-chao
	JIA Yu-min
	LI Yan-rong

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