Preparation and Microstructure of Nanosized GaN Crystals

Chin. Phys. Lett.

1996, Vol. 13

Issue (6): 444-446 DOI:

Original Articles

Preparation and Microstructure of Nanosized GaN Crystals

YU San;LI Hong-dong;YANG Hai-bin;LI Dong-mei;SUN Hai-ping;ZOU Guang-tian

National Laboratory of Superhard Materials, Jilin University, Changchun 130023

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YU San, LI Hong-dong, YANG Hai-bin et al 1996 Chin. Phys. Lett. 13 444-446

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Abstract Gallium nitride crystals in nano-scale have been fabricated by dc arc plasma method using gallium and N₂ +NH₃ as starting materials. Transmission electron microscope, selected area diffraction and x-ray diffraction investigation of the as-grown GaN crystals show that the well faceted crystals are single crystalline GaN in wurtzite structure having lattice constants a₀ = 3.18 Å and c₀ = 5.18 Å.

Keywords: 42.70.Nq 81.20.Ev 61.16.Bg

Published: 01 June 1996

PACS:	42.70.Nq	(Other nonlinear optical materials; photorefractive and semiconductor materials)
	81.20.Ev	(Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation)
	61.16.Bg

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I6/0444

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	YU San
	LI Hong-dong
	YANG Hai-bin
	LI Dong-mei
	SUN Hai-ping
	ZOU Guang-tian

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