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Dislocation Movement in Nitrogen-Doped Czochralski Silicon |
WEI Ya-dong1;LIANG Jun-wu2 |
1Department of Physics, Shanxi University, Taiyuan 030006
2Institute of Semiconductor, Chinese Academy of Sciences, Beijiiig 100083 |
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Cite this article: |
WEI Ya-dong, LIANG Jun-wu 1996 Chin. Phys. Lett. 13 382-385 |
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Abstract Dislocation movement in N-doped Czochralski silicon ( Cz-Si ) was surveyed by four point bend method, Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated, The order of measured dislocation movement velocities, at 700°C ≤ T≤ 800°C and under resolved stress σ = 4.1 kg/ mm2, was Vsb,O >VN,sb,O >VN,O. The experiments showed that nitrogen doping could retard the movement of dislocations.
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Keywords:
61.72.Cc
81.40.Gh
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Published: 01 May 1996
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PACS: |
61.72.Cc
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(Kinetics of defect formation and annealing)
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81.40.Gh
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(Other heat and thermomechanical treatments)
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