Chin. Phys. Lett.  1996, Vol. 13 Issue (5): 382-385    DOI:
Original Articles |
Dislocation Movement in Nitrogen-Doped Czochralski Silicon
WEI Ya-dong1;LIANG Jun-wu2
1Department of Physics, Shanxi University, Taiyuan 030006 2Institute of Semiconductor, Chinese Academy of Sciences, Beijiiig 100083
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WEI Ya-dong, LIANG Jun-wu 1996 Chin. Phys. Lett. 13 382-385
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Abstract Dislocation movement in N-doped Czochralski silicon ( Cz-Si ) was surveyed by four point bend method, Dislocation movement velocities in Cz-Si doped with nitrogen, with both nitrogen and antimony, and with only antimony were investigated, The order of measured dislocation movement velocities, at 700°C ≤ T≤ 800°C and under resolved stress σ = 4.1 kg/ mm2, was Vsb,O >VN,sb,O >VN,O. The experiments showed that nitrogen doping could retard the movement of dislocations.

Keywords: 61.72.Cc      81.40.Gh     
Published: 01 May 1996
PACS:  61.72.Cc (Kinetics of defect formation and annealing)  
  81.40.Gh (Other heat and thermomechanical treatments)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1996/V13/I5/0382
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