Chin. Phys. Lett.  1996, Vol. 13 Issue (5): 378-381    DOI:
Original Articles |
Experimental Results with Siliconization in Reversed Field Pinch Device
ZHANG Peng;LI Qiang;LUO Cui-wen;LI Jie-ping;FANG Shui-quan, YI Ping;XUE Jun;LI Ke-hua;LUO Jun-lin;CAO Zeng;HONG Wen-yu, ZHANG Nian-man;WANG Quan-ming;LU Jie;HUANG Ming, ZHONG Yun-ze;ZHANG Qing-chun;LUO Cui-xian
Southwestern Institute of Physics, P. O. Box 432, Chengdu 610041
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ZHANG Peng, LI Qiang, LUO Cui-wen et al  1996 Chin. Phys. Lett. 13 378-381
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Abstract Reversed field pinch ( RFP ) and ultralow safety factor plasma experimental performances with pulsed discharge cleaning and siliconization on SWIP-RFP device are presented. The wall siliconization was performed by using the device discharges. The experimental results with siliconization in RFP devices showed that the impurity concentrations were decreased in the plasma and better plasma parameters were obtained in the device.
Keywords: 52.40.Hf      52.55.Ez     
Published: 01 May 1996
PACS:  52.40.Hf (Plasma-material interactions; boundary layer effects)  
  52.55.Ez (Theta pinch)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1996/V13/I5/0378
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ZHANG Peng
LI Qiang
LUO Cui-wen
LI Jie-ping
FANG Shui-quan
YI Ping
XUE Jun
LI Ke-hua
LUO Jun-lin
CAO Zeng
HONG Wen-yu
ZHANG Nian-man
WANG Quan-ming
LU Jie
HUANG Ming
ZHONG Yun-ze
ZHANG Qing-chun
LUO Cui-xian
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