Original Articles |
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Experimental Results with Siliconization in Reversed Field Pinch Device |
ZHANG Peng;LI Qiang;LUO Cui-wen;LI Jie-ping;FANG Shui-quan,
YI Ping;XUE Jun;LI Ke-hua;LUO Jun-lin;CAO Zeng;HONG Wen-yu,
ZHANG Nian-man;WANG Quan-ming;LU Jie;HUANG Ming,
ZHONG Yun-ze;ZHANG Qing-chun;LUO Cui-xian
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Southwestern Institute of Physics, P. O. Box 432, Chengdu 610041 |
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Cite this article: |
ZHANG Peng, LI Qiang, LUO Cui-wen et al 1996 Chin. Phys. Lett. 13 378-381 |
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Abstract Reversed field pinch ( RFP ) and ultralow safety factor plasma experimental performances with pulsed discharge cleaning and siliconization on SWIP-RFP device are presented. The wall siliconization was performed by using the device discharges. The experimental results with siliconization in RFP devices showed that the impurity concentrations were decreased in the plasma and better plasma parameters were obtained in the device.
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Keywords:
52.40.Hf
52.55.Ez
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Published: 01 May 1996
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PACS: |
52.40.Hf
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(Plasma-material interactions; boundary layer effects)
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52.55.Ez
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(Theta pinch)
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