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Precipitation of Cu and Ni on Frank-Type Partial Dislocations in Czochralski-Grown Silicon |
| SHEN Bo;ZHANG Rong;SHI Yi;ZHENG You-dou;T. Sekiguchi*;K. Sumino* |
| Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210008
*Institute for Materials Research, Tohoku University, Sendai 980, Japan |
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| Cite this article: |
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SHEN Bo, ZHANG Rong, SHI Yi et al 1996 Chin. Phys. Lett. 13 289-292 |
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Abstract Precipitation behaviors of Cu and Ni on Frank-type partial dislocations in Czochralski-grown silicon are investigated. It is found that Cu develops precipitate colonies in the region away from Frank partials and does not decorate Frank partials when the specimens are cooled slowly, while Ni decorates them although the concentration of Ni is lower than that of Cu in the specimens. The results indicate that Ni impurity is easier to decorate Frank partials than Cu impurity in Si.
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| Keywords:
61.72.Ff
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Published: 01 April 1996
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| PACS: |
61.72.Ff
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(Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.))
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