Photoreflectance Study of GaN Films on Sapphire Substrate

Chin. Phys. Lett.

1996, Vol. 13

Issue (2): 153-156 DOI:

Original Articles

Photoreflectance Study of GaN Films on Sapphire Substrate

QIN Lin-hong;YANG Kai;ZHENG You-dou;ZHANG Rong, DAI Xing-jiang;FENG Duan;HUANG Zhen-chun¹;J. C. Chen¹

Department of Physics, Nanjing University, Nanjing 210093 ¹Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228-5398, USA

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QIN Lin-hong, YANG Kai, ZHENG You-dou et al 1996 Chin. Phys. Lett. 13 153-156

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Abstract Photoreflectance was used to study the optical properties of single crystal hexagonal GaN films on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400eV and the possible origin of the signal was discussed. Optical absorption and reflection were measured. The optical absorption edge of 3.38 eV, and the reflectivity peak at 3.3 eV confirmed the results of photoreflectance.

Keywords: 78.66.Fd 78.40.-q

Published: 01 February 1996

PACS:	78.66.Fd	(III-V semiconductors)
	78.40.-q	(Absorption and reflection spectra: visible and ultraviolet)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I2/0153

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	QIN Lin-hong
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	FENG Duan
	HUANG Zhen-chun
	J. C. Chen

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