Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

Chin. Phys. Lett.

1996, Vol. 13

Issue (11): 874-877 DOI:

Original Articles

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

YANG Kai;QIN Lin-hong;ZHANG Rong;SHEN Bo;ZHENG You-dou;HUANG Zhen-chun¹;J.C. Chen¹

Department of Physics, Nanjing University, Nanjing 210093 ¹Department of Electrical Engineering, University of Maryland Baltimore County, Baltimore, MD 21228-5398, USA

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YANG Kai, QIN Lin-hong, ZHANG Rong et al 1996 Chin. Phys. Lett. 13 874-877

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Abstract The properties of photoconductive blue and ultraviolet detector based on single crystal GaN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition were investigated. The observed optical absorption edge of 3.39eV in optical transmission has been confirmed by the peak of 3.400eV in photoreflectance. The detectable energy span of the GaN device up to ultraviolet was obtained by photocurrent measurement. The dependence of the intensity of photocurrent on the chopper frequency in the measurement was studied, and an easy method was used to determine the response time as 0.4s.

Keywords: 72.40.+w 68.55.Ce

Published: 01 November 1996

PACS:	72.40.+w	(Photoconduction and photovoltaic effects)
	68.55.Ce

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I11/0874

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	YANG Kai
	QIN Lin-hong
	ZHANG Rong
	SHEN Bo
	ZHENG You-dou
	HUANG Zhen-chun
	J.C. Chen

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