Influence of the Energy Level Matching on the Performances of
Organic/Polymeric Electroluminescent Devices

Chin. Phys. Lett.

1996, Vol. 13

Issue (10): 790-793 DOI:

Original Articles

Influence of the Energy Level Matching on the Performances of Organic/Polymeric Electroluminescent Devices

TIAN Wen-jing;HUANG Jin-song¹;WU Fang;SUN Chang-qing²;LIU Xiao-dong³;MA Yu-guang;LIU Shi-yong¹;SHEN Jia-cong

Key Laboratory of Molecular Spectra and Structures, ¹National Laboratory of Integrated Optic Electronics, ²Chemical Department, Jilin University, Changchun 130023 ³Basic Medical College, Norman Bethum University of medical Science, Changchun 130023

Cite this article:

TIAN Wen-jing, HUANG Jin-song, WU Fang et al 1996 Chin. Phys. Lett. 13 790-793

Download: PDF(232KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract The performances such as the operating-voltage and the brightness of three types of devices: single-layer device, double-layer device and three-layer device, were examined. It is demonstrated that the I-V characteristics of single-layer device depends not on the applied voltage but instead on the electric-field strength, and the brightness increased by a factor of 50 and the operating-voltage decreased when introducing one electron transporting layer or an electron transporting layer and one hole blocking layer between the light emitting layer and the negative electrode. In fact, it is imperative to match the energy level of each layer in the electroluminescent device in order to improve its comprehensive performances.

Keywords: 78.55.-m 78.60.Fi 81.20.Sh

Published: 01 October 1996

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.60.Fi	(Electroluminescence)
	81.20.Sh

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I10/0790

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	TIAN Wen-jing
	HUANG Jin-song
	WU Fang
	SUN Chang-qing
	LIU Xiao-dong
	MA Yu-guang
	LIU Shi-yong
	SHEN Jia-cong

Related articles from Frontiers Journals

[1]	SUN Dun-Lu,LUO Jian-Qiao,XIAO Jing-Zhong,ZHANG Qing-Li,CHEN Jia-Kang,LIU Wen-Peng,KANG Hong-Xiang,YIN Shao-Tang. Luminescence and Thermal Properties of Er:GSGG and Yb,Er:GSGG Laser Crystals**[J]. Chin. Phys. Lett., 2012, 29(5): 790-793
[2]	XU Xiao-Yan, MA Xiang-Yang, JIN Lu, YANG De-Ren. Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films[J]. Chin. Phys. Lett., 2012, 29(3): 790-793
[3]	WU Li-Ang, FU Heng-Yi, QIAN Jiang-Yun, ZHAO Da-Liang, LUO Qun, QIAO Xu-Sheng, FAN Xian-Ping, ZHANG Xiang-Hua. The Preparation and Photoluminescence Properties of Fluorosilicate Glass Ceramics Containing CeF₃:Dy³⁺ Nanocrystals**[J]. Chin. Phys. Lett., 2012, 29(1): 790-793
[4]	YANG Lin-Hong, DONG Hong-Xing, SUN Zheng, SUN Liao-Xin, SHEN Xue-Chu, CHEN Zhang-Hai . Temperature-Induced Phase Transition of In₂O₃ from a Rhombohedral Structure to a Body-Centered Cubic Structure**[J]. Chin. Phys. Lett., 2011, 28(8): 790-793
[5]	YIN Yang, RAN Guang-Zhao, ZHANG Bin, QIN Guo-Gang . Photo- and Electro-Luminescence at 1.54µm from Er³⁺ in SiC:Er₂O₃ Films and Structures[J]. Chin. Phys. Lett., 2011, 28(7): 790-793
[6]	LIAN Jia-Rong, NIU Fang-Fang, LIU Ya-Wei, ZENG Peng-Ju . Improved Hole-Blocking and Electron Injection Using a TPBI Interlayer at the Cathode Interface of OLEDs**[J]. Chin. Phys. Lett., 2011, 28(4): 790-793
[7]	ZHANG Jia-Chi, QIN Qing-Song, YU Ming-Hui, SUN Jia-Yao, SHI Liu-Rong, MA Xin-Long . Up-Conversion Photostimulated Luminescence of Mg₂SnO₄ for Optical Storage**[J]. Chin. Phys. Lett., 2011, 28(2): 790-793
[8]	LI Xu, GUAN Li, AN Jia-Yi, JIN Li-Tao, YANG Zhi-Ping, YANG Yan-Min, LI Pan-Lai, FU Guang-Sheng . Synthesis of Red Phosphor CaZrO₃:Eu³⁺ for White Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(2): 790-793
[9]	WANG Xiao, JIANG Zui-Min, XU Fei, , MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er³⁺ Emission from an Er−Si Codoped Al₂O₃ Film by Stacking Si−Doped Al₂O₃ Sublayers**[J]. Chin. Phys. Lett., 2011, 28(12): 790-793
[10]	CHEN Jun, FAN Guang-Han, PANG-Wei, ZHENG Shu-Wen . Comparison of GaN-Based Light-Emitting Diodes by Using the AlGaN Electron-Blocking Layer and InAlN Electron-Blocking Layer**[J]. Chin. Phys. Lett., 2011, 28(12): 790-793
[11]	FENG Lie-Feng, LI Yang, LI Ding, WANG Cun-Da, ZHANG Guo-Yi, YAO Dong-Sheng, LIU Wei-Fang, XING Peng-Fei . Frequency Response of Modulated Electroluminescence of Light-Emitting Diodes**[J]. Chin. Phys. Lett., 2011, 28(10): 790-793
[12]	LI Pan-Lai, WANG Zhi-Jun, YANG Zhi-Ping, GUO Qing-Lin . Luminescence and Site Occupancy of Eu²⁺ in Ba₂ Ca(BO₃)₂**[J]. Chin. Phys. Lett., 2011, 28(1): 790-793
[13]	ZHONG Ze, SUN Li-Jie, CHEN Xiao-Qing, WU Xiao-Peng, FU Zhu-Xi. Effect of Zn Interstitials on Enhancing Ultraviolet Emission of ZnO Films Deposited by MOCVD[J]. Chin. Phys. Lett., 2010, 27(9): 790-793
[14]	LIANG Chun-Jun, ZOU Hui, HE Zhi-Qun, ZHANG Chun-Xiu, LI Dan, WANG Yong-Sheng. Polymer Light-Emitting Diode Using Conductive Polymer as the Anode Layer[J]. Chin. Phys. Lett., 2010, 27(9): 790-793
[15]	WANG Wei, HUANG Bei-Ju, DONG Zan, LIU Hai-Jun, ZHANG Xu, GUAN Ning, CHEN Jin, GUO Wei-Lian, NIU Ping-Juan, CHEN Hong-Da. A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology[J]. Chin. Phys. Lett., 2010, 27(4): 790-793

Viewed

Full text

Abstract