Band Gap Behaviors of (α-GaN) / (α-AIN) Superlattice and (β-GaN)/(β- A1N) Superlattice

Chin. Phys. Lett.

1996, Vol. 13

Issue (10): 786-789 DOI:

Original Articles

Band Gap Behaviors of (α-GaN) / (α-AIN) Superlattice and (β-GaN)/(β- A1N) Superlattice

KE San-huang;ZHANG Kai-ming;XIE Xi-de

Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433

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KE San-huang, ZHANG Kai-ming, XIE Xi-de 1996 Chin. Phys. Lett. 13 786-789

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Abstract By using an ab initio calculation, it is found that the variation of the fundamental band gap of (α-GaN)_n / (α-AlN))_n (0001) superlattices is remarkably different from that of (β-GaN))_n / (β- A1N))_n (001) superlattices. The difference in band gap behaviors was shown to be due to the internal electric fields induced by the spontaneous polarizations in α-GaN and α-AlN. In addition, the valence-band offsets at the interfaces of these superlattices are also determined. The results are in good agreement with those available from experimental data.

Keywords: 73.20.Dx 71.25.Tn

Published: 01 October 1996

PACS:	73.20.Dx
	71.25.Tn

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I10/0786

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