Chin. Phys. Lett.  1996, Vol. 13 Issue (10): 779-781    DOI:
Original Articles |
Epitaxial Growth of High Quality Diamond Film on the Cubic Boron Nitride Surface by Chemical Vapor Deposition
GAO Chun-xiao;ZHANG Tie-chen;ZOU Guang-tian;JIN Zeng-sun;YANG Jie*
National Laboratory of Superhard Materials, Jilin University, Changchun 130023 *Laboratory of Changchun Flying School, Changchun 130012
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GAO Chun-xiao, ZHANG Tie-chen, ZOU Guang-tian et al  1996 Chin. Phys. Lett. 13 779-781
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Abstract High quality diamond epitaxial film has been obtained on high pressure synthesized cubic boron nitride crystal surface by dc glow discharge chemical vapor deposition. The growth characteristics of the epitaxial film have been investigated by scanning electron microscope. The quality of the film has been confirmed by Raman spectroscope to be close to that of natural diamond.


Keywords: 68.55.Ce      81.15.Gh     
Published: 01 October 1996
PACS:  68.55.Ce  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1996/V13/I10/0779
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GAO Chun-xiao
ZHANG Tie-chen
ZOU Guang-tian
JIN Zeng-sun
YANG Jie
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