Chin. Phys. Lett.  1995, Vol. 12 Issue (7): 435-437    DOI:
Original Articles |
Study of Diamond Nucleation on Porous Silicon
BAI Yizhen;WANG Chunlei;JIN Zengsun;LÜ Xianyi;ZOU Guangtian
State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
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BAI Yizhen, WANG Chunlei, JIN Zengsun et al  1995 Chin. Phys. Lett. 12 435-437
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Abstract Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method. Nucleation density and site have been observed and analyzed by using scanning electron micrography. Experimental results showed that the nucleation density changes with the porosity and the nucleation occurs mostly on the edge of the pores. Reasons of these phenomena are discussed.
Keywords: 81.15.Gh      61.50.Cj     
Published: 01 July 1995
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  61.50.Cj  
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http://cpl.iphy.ac.cn/       OR      http://cpl.iphy.ac.cn/Y1995/V12/I7/0435
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BAI Yizhen
WANG Chunlei
JIN Zengsun
Xianyi
ZOU Guangtian
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