Chin. Phys. Lett.  1995, Vol. 12 Issue (2): 120-122    DOI:
Original Articles |
Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride Substrate by Hot-Filament Chemical Vapour Deposition
JIN Zengsun;LU Xianyi;ZOU Guangtian
State Key Laboratory of Superhard Material, Jilin University, Changchun 130023
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JIN Zengsun, LU Xianyi, ZOU Guangtian 1995 Chin. Phys. Lett. 12 120-122
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Abstract Diamond films have been grown on high pressure synthesized cubic boron nitride (c-BN) particles by hot-filament chemical vapor deposition method, and heteroepitaxial diamond films on the c-BN (100) facets with no-evident defects were obtained, but polycrystalline diamond films were formed only on the c-BN (111) facets.
Keywords: 81.15.Gh      68.55.Ce     
Published: 01 February 1995
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  68.55.Ce  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1995/V12/I2/0120
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JIN Zengsun
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