Chin. Phys. Lett.  1994, Vol. 11 Issue (9): 573-576    DOI:
Original Articles |
A New Method for Studying the Distribution of Induced Defects in Potential Wells in a-Si : H/a-SiNx : H Multilayer
WANG Zhichao;GUO Shengkang;CAO Guorong;CHEN Cai;SUN Meixiang
Department of Physics, Nanjing University, Nanjing 210008
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WANG Zhichao, GUO Shengkang, CAO Guorong et al  1994 Chin. Phys. Lett. 11 573-576
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Abstract The induced defects and their distribution in a-Si: H/a-SiNx : H multilayers can be determined by use of electromagnetic technique. It is found that the distributions of the induced defects in the interface regions on both sides of the a-Si:H sublayer are asymmetric and related to the growth direction of the film; a large number of induced defects exist in the interface region away from substrate, but few or no in the interface region near substrate.
Keywords: 64.70.-p      68.35.Dr      68.65.+g     
Published: 01 September 1994
PACS:  64.70.-p (Specific phase transitions)  
  68.35.Dr  
  68.65.+g  
TRENDMD:   
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1994/V11/I9/0573
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WANG Zhichao
GUO Shengkang
CAO Guorong
CHEN Cai
SUN Meixiang
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