Chin. Phys. Lett.  1994, Vol. 11 Issue (5): 297-300    DOI:
Original Articles |
Electrical Properties of Periodic Pd/Mo Bimetal Films
WANG Xiaoping;ZHAO Texiu;WANG Shunxi*;JI Hang;LIANG Qi
Department of Physics, University of Science and Technology of China, Hefei 230026 *High Magnetic Field Laboratory, Institute of Plasma Physics, Academia Sinica, Hefei 230031
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WANG Xiaoping, ZHAO Texiu, WANG Shunxi et al  1994 Chin. Phys. Lett. 11 297-300
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Abstract The electrical resistivity and the temperature coefficient of resistance (TCR) of periodic Pd/Mo bimetal films are reported for the bilayer wavelength in the range 1.5-13nm by varying the ratio of Pd and Mo thicknesses in the temperature range from 77 to 300K. The resistivity is found to be nearly proportional to the inverse of the bilayer wavelength. The most striking feature is that the TCR is decreased with bilayer wavelength and the change in sign of the TCR as Pd/Mo thickness ratio is varied. Taking into account the effects of electron weak localization in Mo layer, the experimental results can be explained.
Keywords: 73.60.Aq      73.50.-h      73.20.Fz     
Published: 01 May 1994
PACS:  73.60.Aq  
  73.50.-h (Electronic transport phenomena in thin films)  
  73.20.Fz (Weak or Anderson localization)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1994/V11/I5/0297
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WANG Xiaoping
ZHAO Texiu
WANG Shunxi
JI Hang
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