| Original Articles |
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Photoconductivity Characteristics of Porous Silicon |
| LIU Kaifeng;WENG Yumin;ZHU Lei*;WANG Shenyi*;ZONG Xiangfu |
| Department of Material Science, Fudan University, Shanghai 200433
*Department of Physics, Fudan University, Shanghai 200433
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| Cite this article: |
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LIU Kaifeng, WENG Yumin, ZHU Lei et al 1994 Chin. Phys. Lett. 11 289-292 |
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Abstract The highly photo-sensitive characteristics of porous silicon (PS) were observed. The transient behaviors of photoconductivity in horizontal and perpendicular directions of PS surface were very different, though both of them include two decay components. The photoconduction spectra at room temperature and 14.5K show that characteristics of PS are different from those of silicon substrate. The difference may be attributed to quantum confinement effect in nano-size microstructures of PS.
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| Keywords:
72.80.-r
72.20.Jv
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Published: 01 May 1994
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| PACS: |
72.80.-r
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(Conductivity of specific materials)
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72.20.Jv
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(Charge carriers: generation, recombination, lifetime, and trapping)
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