Microstructural Characterization for Ge Clusters Embedded in
a-SiN<suB>y</suB> Matrix Prepared by PECVD Method

Chin. Phys. Lett.

1994, Vol. 11

Issue (4): 253-256 DOI:

Original Articles

Microstructural Characterization for Ge Clusters Embedded in a-SiN_y Matrix Prepared by PECVD Method

QU Xuexuan;CHEN Kunji;WANG Mingxiang;LI Zhifeng;XIA Hua;FENG Duan

Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210008

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QU Xuexuan, CHEN Kunji, WANG Mingxiang et al 1994 Chin. Phys. Lett. 11 253-256

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Abstract We report the successful synthesis of Ge clusters embedded in a-SiN_y : H matrix prepared by the plasma enhanced chemical vapor deposition (PECVD) method. Chemical and microstructural characteristics of this granular thin film were analyzed using the infrared absorption, x-ray diffraction, Raman scattering, and transmission electron microscopy. Finally we discuss briefly the synthesis mechanism of this new material.

Keywords: 81.15.Gh 68.55.Jk 68.90.+g

Published: 01 April 1994

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Jk
	68.90.+g	(Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I4/0253

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	QU Xuexuan
	CHEN Kunji
	WANG Mingxiang
	LI Zhifeng
	XIA Hua
	FENG Duan

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