Photoemission Studies of K-Promoted Nitridation of InP (100)
Surface Using Synchrotron Radiation

Chin. Phys. Lett.

1994, Vol. 11

Issue (11): 697-700 DOI:

Original Articles

Photoemission Studies of K-Promoted Nitridation of InP (100) Surface Using Synchrotron Radiation

ZHAO Texiu;JI Hong;LIANG Qi;WANG Xiaoping;XU Pengshou¹;LU Erdong¹;WU Jianxin¹;XU Zhenjia²

Department of Physics, University of Science and Technology of China, Hefei 230026 ¹National Synchrotron Radiation Laboratory USTC, Hefei 230027 ²Institute of Semiconductor, Academia Sinica, Beijing 100083

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ZHAO Texiu, JI Hong, LIANG Qi et al 1994 Chin. Phys. Lett. 11 697-700

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Abstract The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation. In comparison with InP(110) surface, we found the promotion is much stronger for InP(100) surface due to the central role of surface defects in the promotion; furthermore, in contrast with K-promoted oxidation of InP(100) where the bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).

Keywords: 73.20.-r 79.60.-i

Published: 01 November 1994

PACS:	73.20.-r	(Electron states at surfaces and interfaces)
	79.60.-i	(Photoemission and photoelectron spectra)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I11/0697

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	ZHAO Texiu
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	XU Pengshou
	LU Erdong
	WU Jianxin
	XU Zhenjia

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