Chin. Phys. Lett.  1993, Vol. 10 Issue (12): 744-747    DOI:
Original Articles |
LMTO Study on Band Structure of β-SiC/β-GaN (100) Interface
LU Wenchang;ZHANG Kaiming;XIE Xide
Department of Physics, Fudan University, Shanghai 200433
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LU Wenchang, ZHANG Kaiming, XIE Xide 1993 Chin. Phys. Lett. 10 744-747
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Abstract The linear muffin-tin orbital method and the supercell approach are used to study the band structures of the β-SiC/β-GaN (100) interface within the atomic sphere approximation. It is found that the Si-N, C-Ga bonding configuration is favorable. The band alignment is of type-I with the band gap of the β-GaN completely endosing the band gap of the β-Sic. The localized interface state strongly related to the interface C atoms exists in the original band gap.
Keywords: 73.20.At      71.70.Ms     
Published: 01 December 1993
PACS:  73.20.At (Surface states, band structure, electron density of states)  
  71.70.Ms  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1993/V10/I12/0744
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