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A Novel Ge Nanostructure Exhibiting Visible Photoluminescence |
| JIANG Jiangong1,2;CHEN Kunji1;HUANG Xinfan1;FENG Duan1;SUN Dayou2 |
| 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210008
2National "ASIC System" Engineering and Technology Research Centre, Southeast University, Nanjing 210018 (mailing address)
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| Cite this article: |
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JIANG Jiangong, CHEN Kunji, HUANG Xinfan et al 1993 Chin. Phys. Lett. 10 630-633 |
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Abstract The a-Ge: H/a-SiNx :H multiquantum-well structures were prepared by a computercontrolled plasma enhanced chemical vapor deposition method and then crystallized by Ar+ laser annealing technique. When the Ge well-layer thickness was reduced to 30Å, the crystallized sample showed a room temperature photoluminescence with a peak at about 2.26eV. Meanwhile some significant characteristics of such a novel Ge nanostructure were also revealed by x-ray diffraction. Possible mechanisms of this visible PL phenomenon have been discussed.
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| Keywords:
78.55.-m
68.65.+g
61.10.–i
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Published: 01 October 1993
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