Original Articles |
|
|
|
|
Vacancy-Type Defects in Neutron-Irradiated Silicon |
MENG Xiangti |
Institute of Nuclear Energy Technology, Tsinghua University, Beijing 100084 |
|
Cite this article: |
MENG Xiangti 1993 Chin. Phys. Lett. 10 605-608 |
|
|
Abstract Positron annihilation measurements show that the radiation defects and secondary defects in neutron-transmutation-doped (NTD) Si irradiated by two neutron doses can be removed at 600-650°C. The concentration and annealing behavior of V-type and V2 defects are related to the neutron doses. V4 appears at 150°C and 450°C - 550°C in NTD Si irradiated by higher neutron dose.
|
Keywords:
61.80.Hg
78.70.Bj
|
|
Published: 01 October 1993
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|