High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds

Chin. Phys. Lett.

1992, Vol. 9

Issue (8): 444-447 DOI:

Original Articles

High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds

WANG Wanlu;GAO Jinying;LIAO Kejun

Department of Physics, Lanzhou University, Lanzhou 730000

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WANG Wanlu, GAO Jinying, LIAO Kejun 1992 Chin. Phys. Lett. 9 444-447

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Abstract Diamond film have been synthesized by dc plasma chemical vapour deposition (CVD) from a gaseous mixture of acetone and hydrogen gases with a growth rate of 220μm/h. The films obtained have good crystallinity that are chaxacte-ized by Raman spectrometry, scanning electron microscopy and x-ray diffraction. X-ray photoelectron spectroscopy analysis have confirmed that diamond nucleation and growth are on SiC rather than on clean Si. The mechanism of high rate growth diamond film have been discussed too.

Keywords: 81.15.Gh 68.55.Gi 79.60.-i

Published: 01 August 1992

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.55.Gi
	79.60.-i	(Photoemission and photoelectron spectra)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I8/0444

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	GAO Jinying
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