Refractive indices of GaInAsSb Quaternary Alloys Grown by Molecular Beam Epitaxy

Chin. Phys. Lett.

1992, Vol. 9

Issue (6): 325-328 DOI:

Original Articles

Refractive indices of GaInAsSb Quaternary Alloys Grown by Molecular Beam Epitaxy

BI Wengang;LI Aizhen

Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050

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BI Wengang, LI Aizhen 1992 Chin. Phys. Lett. 9 325-328

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Abstract The refractive indices of molecular beam epitaxy grown GaInAsSb quaternary alloys on semi-insulating GaAs substrates have been determined by Fourier transform infrared spectroscopy measurement at room temperature. Possible reasons of the dispersion characteristics of the refractive index below the bandgap have been discussed in detail.

Keywords: 78.20.Ci 78.65.Fa

Published: 01 June 1992

PACS:	78.20.Ci	(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
	78.65.Fa

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I6/0325

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