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First Principle Self-Consistent Pseudopotential Calculation on the Electronic Structure of (InAs)1(GaAs)1 Superlattice |
FAN Weijun*;GU Zongquan**;XIA Jianbai* |
*National Laboratory for Superlattice and Microstructure,
**Institute of Semiconductors, Academia Sinica, Beijing 100083
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Cite this article: |
FAN Weijun, GU Zongquan, XIA Jianbai 1992 Chin. Phys. Lett. 9 305-308 |
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Abstract The band structure of the (InAs)1(GaAs)1 strained superlattice is calculated by the self-consistent pseudopotential method. The results show that the (InAs)1(GaAs)1 is a direct-gap superlattice. With the local density approximation, the band gap calculated with the room temperature lattice constants is 0.43eV, and the corrected value is 0.91eV, in agreement with experimental results. Because of the lattice mismatch between InAs. and GaAs layers, the three-fold degenerate energy level at the top of valence band splits into two levels with a spacing of 0.29eV. The splitting of energy level is also estimated and explained using the effective-mass theory.
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Keywords:
71.10+x
73.40.Lq
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Published: 01 June 1992
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PACS: |
71.10+x
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73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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