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Electronic Structure of (111)-Oriented Strained-Layer SiGe Superlattice |
| GU Binglin;DUAN Wenhui;ZHU Jialin;WANG Mingliang* |
| Department of Physics, Tsinghua University, Beijing 100084
*Department of Physics, Shanxi University, Taiyuan 030006 |
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| Cite this article: |
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GU Binglin, DUAN Wenhui, ZHU Jialin et al 1992 Chin. Phys. Lett. 9 198-201 |
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Abstract Using the first-principle self-consistent linear-muffin-tin-orbital method within the local density approximation, band structure of (111)-oriented strained-layer SiGe superlattice is studied. Three different ordered arrangements of atom layers (Si-GeΞSi-Ge Si-SiΞ Ge-Ge and SiΞSi-GeΞGe) are considered. Calcu- lated results indicate that (111)-oriented SiGe strained layer superlattices are semiconductive, with a band gap about 1.0eV. The first two superlattices are indirect band gap semiconductors, and the third one (SiΞSi-GeΞ Ge) is a direct band gap semiconductor. The influence of strain on the band structure is also investigated.
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| Keywords:
71.25.Rk
73.20.Dx
68.65.+g
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Published: 01 April 1992
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