Characteristics of the Plasma During Chemical Vapor Deposition for Diamond Growth

Chin. Phys. Lett.

1992, Vol. 9

Issue (3): 144-147 DOI:

Original Articles

Characteristics of the Plasma During Chemical Vapor Deposition for Diamond Growth

GAO Kelin*,ZHAN Rujuan;WANG Chunlin;CAO Jinxiang;XIANG Zhilin

*Wuhan Institute of Physics, Academia Sinica, Wuhan 430071 University of Science and Technology of China, Hefei 230026

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GAO Kelin, ZHAN Rujuan, WANG Chunlin et al 1992 Chin. Phys. Lett. 9 144-147

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Abstract During the course of diamond growth by dc plasma chemical vapor deposition and microwave plasma chemical vapor deposition, characteristics of the plasma were measured by Langmuir single probe, double probe, emission spectrometer and microwave interferometer. The relationships between plasma parameters and the concentration of hydrocarbon, the power, pressure and the gas flow rate are discussed.

Keywords: 52.40.Hf 52.80.Hc 81.15.Gh

Published: 01 March 1992

PACS:	52.40.Hf	(Plasma-material interactions; boundary layer effects)
	52.80.Hc	(Glow; corona)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I3/0144

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	GAO Kelin
	ZHAN Rujuan
	WANG Chunlin
	CAO Jinxiang
	XIANG Zhilin

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