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Interfacial Properties of a-Si:H/a-SiNx:H Multilayers Studied by electroabsorption Spectroscopy |
| LIU Xiangna;ZHAO zhouying;WANG Yong;LI Wenkai |
| Department of Physics, Nanjing University, Nanjing 210008 |
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| Cite this article: |
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LIU Xiangna, ZHAO zhouying, WANG Yong et al 1991 Chin. Phys. Lett. 8 364-367 |
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Abstract By using electroabsorption method, we find that the built-in field (~105 V.cm-1) in the a-Si sublayers of a-Si:H/a-SiNx:H multilayers points towards the sample surfaces. We ascribe the internal field to the asymmetric distribution of defect states which exist primarily in the silicon side of the silicon-on-nitride interfaces, owing to the large repellent lattice stress there. We also find that the built-in potential depends strongly on x, with a maximum value near x = 1.0. We intend to explain it as a result of structural softening as more N atoms are introduced into Si networks in the range of x > 1.0.
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| Keywords:
68.65.+g
73.90.+f
78.20.Wc
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Published: 01 July 1991
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68.65.+g
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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78.20.Wc
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