Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

Chin. Phys. Lett.

1991, Vol. 8

Issue (7): 348-351 DOI:

Original Articles

Growth of Diamond Films by Microwave Plasma Chemical Vapor Deposition

GAO Kelin¹;WANG Chunlin²;ZHAN Rujuan¹;PENG Dingkun²;MENG Giangyao²;XIANG Zhilin¹

¹Department of Modern Physics, University of Science and Technology of China, Hefei 230026 ²Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026

Cite this article:

GAO Kelin, WANG Chunlin, ZHAN Rujuan et al 1991 Chin. Phys. Lett. 8 348-351

Download: PDF(170KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract Diamond thin films were produced by microwave plasma chemical vapor deposition. The deposit is identified by X-ray diffraction, Raman spectroscopy and Scanning electron microscopy. During the course of diamond growth, the characteristics of the plasma have been measured by means of the Langmuir double probe and emission spectrometer.

Keywords: 52.40.Hf 52.80.Hc 81.15.Gh

Published: 01 July 1991

PACS:	52.40.Hf	(Plasma-material interactions; boundary layer effects)
	52.80.Hc	(Glow; corona)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I7/0348

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	GAO Kelin
	WANG Chunlin
	ZHAN Rujuan
	PENG Dingkun
	MENG Giangyao
	XIANG Zhilin

Related articles from Frontiers Journals

[1]	LI Guo-Fu,,YU Hai-Jun,DUO Li-Ping,JIN Yu-Qi,WANG Jian,SANG Feng-Ting,WANG De-Zhen. Pulsed Chemical Oxygen Iodine Lasers Excited by Pulse Gas Discharge with the Assistance of Surface Sliding Discharge Pre-ionization**[J]. Chin. Phys. Lett., 2012, 29(5): 348-351
[2]	OUYANG Ji-Ting, DUAN Xiao-Xi, XU Shao-Wei, HE Feng. The Key Factor for Uniform and Patterned Glow Dielectric Barrier Discharge[J]. Chin. Phys. Lett., 2012, 29(2): 348-351
[3]	SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 348-351
[4]	BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al₂O₃ Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 348-351
[5]	SANG Ling, WANG Jun, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 348-351
[6]	LI Zhe-Yang, , HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices**[J]. Chin. Phys. Lett., 2011, 28(9): 348-351
[7]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 348-351
[8]	CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan, , LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 348-351
[9]	LI Xue-Chen, JIA Peng-Ying, ZHAO Na . Spatial-Temporal Patterns in a Dielectric Barrier Discharge under Narrow Boundary Conditions in Argon at Atmospheric Pressure**[J]. Chin. Phys. Lett., 2011, 28(4): 348-351
[10]	CHEN Yao, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 348-351
[11]	WEI Meng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 348-351
[12]	HOU Qi-Feng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN**[J]. Chin. Phys. Lett., 2011, 28(3): 348-351
[13]	YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing . Properties of Si Doped Al_0.4Ga_0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD**[J]. Chin. Phys. Lett., 2011, 28(2): 348-351
[14]	ZHOU Zhi-Feng, QIN Fu-Wen, , ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N₂ Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD**[J]. Chin. Phys. Lett., 2011, 28(2): 348-351
[15]	LV Wen-Bin, WANG Lai, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers**[J]. Chin. Phys. Lett., 2011, 28(12): 348-351

Viewed

Full text

Abstract