Improved Activation of Mg<sup>+</sup> and P<sup>+</sup> Dual Implantation into GaAs

Chin. Phys. Lett.

1991, Vol. 8

Issue (5): 225-228 DOI:

Original Articles

Improved Activation of Mg⁺ and P⁺ Dual Implantation into GaAs

SHEN Honglie;ZHOU Zuyao;XIA Guanqun;ZOU Shichang

Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050

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SHEN Honglie, ZHOU Zuyao, XIA Guanqun et al 1991 Chin. Phys. Lett. 8 225-228

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Abstract Co-implantation of phosphorus was used to enhance the activation of the implanted magnesium in GaAs. Improved activations were observed in dually implanted samples by either furnace annealing or rapid thermal annealing. For dose of 5x10¹⁴ cm^-2 Mg⁺, an activation of 74% with a sheet resistance 216Ω/⊗ was obtained for dual implant compared to the activation of 33% and sheet resistance of 367Ω/⊗ for single implant after rapid thermal annealing. The results suggest that the high carrier concentration can be obtained by this technique.

Keywords: 72.80.Ey 61.70.Tm 61.70.Wp

Published: 01 May 1991

PACS:	72.80.Ey	(III-V and II-VI semiconductors)
	61.70.Tm
	61.70.Wp

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I5/0225

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