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Preparation of High Quality p-Type Diamond Thin Films by Thermal Chemical Vapor Deposition |
| YU San;JIN Zengsun;LÜ Xianyi;ZOU Guangtian |
| Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023 |
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| Cite this article: |
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YU San, JIN Zengsun, LÜ et al 1991 Chin. Phys. Lett. 8 203-206 |
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Abstract P-type semiconducting polycrystalline diamond thin films doped with boron were synthesized on single crystalline silicon substrate by thermal chemical vapor deposition from a tungsten filament and placing boron-contained substance (boron nitride or elemental boron) on sample holder. The films were determined to be the high quality diamond by Raman spectroscopy, X-ray diffraction and scanning electron microscope measurements. The doping properties of boron were measured by Hall method and infrared absorption.
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| Keywords:
68.55.Gi
68.55.Ln
81.15.Gh
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Published: 01 April 1991
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| PACS: |
68.55.Gi
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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