Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates

Chin. Phys. Lett.

1991, Vol. 8

Issue (3): 149-152 DOI:

Original Articles

Implantation Energy Selection in Molecular-Beam Epitaxy GaAs Films on Si Substrates

XIAO Guangming^*;YIN Shiduan^*;ZHANG Jingping^*;DING Aiju;DONG Aihua;ZHU Peiran;ZHOU Junming;LIU Jiarui

^*Institute of Semiconductors, Academia Sinica, Beijing 100083 Institute of Physics, Academia Sinica, Beijing 100080

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XIAO Guangming, YIN Shiduan, ZHANG Jingping et al 1991 Chin. Phys. Lett. 8 149-152

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Abstract GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25μm on Si have been implanted with Si ions at 1.2MeV to dose of 1x10¹⁵/cm². A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2MeV. The experimental result show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.

Keywords: 61.70.At 81.10.Jt

Published: 01 March 1991

PACS:	61.70.At
	81.10.Jt	(Growth from solid phases (including multiphase diffusion and recrystallization))

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	YIN Shiduan
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	LIU Jiarui

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