Formation of Nitride Cu<suB>3</suB>N by MeV N-Ion Implantation into Cu

Chin. Phys. Lett.

1991, Vol. 8

Issue (10): 525-528 DOI:

Original Articles

Formation of Nitride Cu₃N by MeV N-Ion Implantation into Cu

CUI Fuzhai^*;A.M. Vredenberg;R. de Reus;F. W. Saris

^*Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 FOM-Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands

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CUI Fuzhai, A.M. Vredenberg, R. de Reus et al 1991 Chin. Phys. Lett. 8 525-528

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Abstract Experimental evidences are presented to show the formation of nitride, Cu₃N, in pure Cu sample by N-ion implantation. This result is obtained in the case of MeV ion implantation. Previous experiments showed that this compound can not be formed by N-ion implantation into Cu at incident energy of about 100 keV. This finding indicates there exist certain differences in phase formation by ion implantation at the two energies.

Keywords: 61.80.Jh 68.55.Nq 61.70.Vn

Published: 01 October 1991

PACS:	61.80.Jh	(Ion radiation effects)
	68.55.Nq	(Composition and phase identification)
	61.70.Vn

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I10/0525

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