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Excitation Intensity Dependence of Photoluminescence in a-C:H and a-C Films
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| LI Qingshan1;GUO Hua;MA Yurong;FANG Rongchuan;XU Cunyi2 |
| Department of Physics, University of Science and Technology of China, Hefei 230026
1On leave from Qufu Normal University.
2Center of Structure and Element Analysis, University of Science and Technology of China, Hefei 230026
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| Cite this article: |
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LI Qingshan, GUO Hua, MA Yurong et al 1991 Chin. Phys. Lett. 8 48-51 |
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Abstract We present the novel results of excitation intensity dependent photoluminescence (PL) in a-C:H and a-C thin films. Sublinear and superlinear phenomena of PL have been observed for a-C:H films. There are two PL bands in a-C films under lower excitation intensity. These results are qualitatively explained in the light of band tail state saturation and the contribution of gap states.
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| Keywords:
78.55.-m
78.55.Hx
81.15.-z
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Published: 01 January 1991
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.55.Hx
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(Other solid inorganic materials)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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