IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1<suB>x</suB>Ga<suB>1-x</suB>As

Chin. Phys. Lett.

1990, Vol. 7

Issue (9): 421-424 DOI:

Original Articles

IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1_xGa_1-xAs

KANG Junyong;HUANG Qisheng;LIN Hong;CHEN Chao

Department of Physics, Xiamen University, Xiamen 361005

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KANG Junyong, HUANG Qisheng, LIN Hong et al 1990 Chin. Phys. Lett. 7 421-424

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Abstract A bound-exciton and a donor-acceptor(D-A) pair emission in photoluminescence are identified for Te-doped A1_xGa_1-xAs. The D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transition and the donor binding energy is determined as a function of composition x up to 0.75. Except the deep DX level, a new shallower deep state is found in deep level transient spectra under light illumination and is associated with Te-related donor state in PL.

Keywords: 71.55.Eq 72.80.Ey

Published: 01 September 1990

PACS:	71.55.Eq	(III-V semiconductors)
	72.80.Ey	(III-V and II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I9/0421

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	KANG Junyong
	HUANG Qisheng
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	CHEN Chao

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