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STOPPING POWER OF PROTON IN MONOCRYSTALLINE, POLYCRYSTALLINE AND AMORPHOUS SILICON
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| MA zhongquan*;LIU Jiarui;ZHU Peiran |
| Institute of Physics, Academia Sinica, Beijing 100080
*Xinjiang Institute of Physics, Academia Sinica, Urumqi 830011
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| Cite this article: |
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MA zhongquan, LIU Jiarui, ZHU Peiran 1990 Chin. Phys. Lett. 7 226-229 |
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Abstract The allotropic effect on the electronic topping power of protons in solids was systematically determined by the nuclear resonance reaction 27Al (p ,γ) 28Si at Ep =774 and 992ke V in an silicon on sapphire (SOS) sample of epitaxial Si on sapphire. Details of the experimental technique are described. The experimental error is less than3 %.
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| Keywords:
61.80.Mr
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Published: 01 May 1990
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