PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF InP ON GaAs SUBSTRATE GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

Chin. Phys. Lett.

1990, Vol. 7

Issue (11): 522-525 DOI:

Original Articles

PHOTOLUMINESCENCE SPECTRA OF STRAINED HETEROSTRUCTURE OF InP ON GaAs SUBSTRATE GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION

TENG Da;ZHUANG Weihua

Laboratory of Superlattice and Microstructure, Institute of Semiconductors, Academia Sinica, Beijing 100083

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TENG Da, ZHUANG Weihua 1990 Chin. Phys. Lett. 7 522-525

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Abstract A high-energy shift of the band-band recombination has been observed in photoluminescence spectra of the strained InP layer grown on GaAs substrate. The InP layer is under biaxial compressive strain at temperatures below the growth temperature, because the thermal expansion coefficient of InP is smaller than that of GaAs. The strain value determined by the energy shift of the band-edge peak is in good agreement with the calculated thermal strain. A band to carbon acceptor recombination is also identified.

Keywords: 73.40.Lq 46.30.Jv 65.70.+y 78.55.Cr

Published: 01 November 1990

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	46.30.Jv
	65.70.+y
	78.55.Cr	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1990/V7/I11/0522

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	ZHUANG Weihua

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