Chin. Phys. Lett.  1989, Vol. 6 Issue (5): 209-212    DOI:
Original Articles |
ROLE OF ALTER LAYER IN DEPTH PROFILE OF INTERFACE
ZHANG Qiangji;LU Ming;FEI Lu
Institute of Modern Physics, Fudan University, Shanghai
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ZHANG Qiangji, LU Ming, FEI Lu 1989 Chin. Phys. Lett. 6 209-212
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Abstract A new model based on the alter layer induced by ion bombardment has been proposed, which can explain the depth profile of interface of Ta2O5/Ta quite well. In contradiction with the generally accepted point of view the depth profile does not follow the shape of the error function. The dcminant factor for resolution is the thickness of the alter layer (δ) rather than the electron mean free path (λ). The Ta2O5/Ta sample was prepared by the method of anodic oxidation with thickness of 500Å. All the surface analyses were performed by using scanning Auger micro probe (model PHI-590) at room temperature.
Keywords: 6180J      7920N     
Published: 01 May 1989
PACS:  6180J  
  7920N  
  6800  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1989/V6/I5/0209
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ZHANG Qiangji
LU Ming
FEI Lu
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