Chin. Phys. Lett.  1989, Vol. 6 Issue (4): 181-184    DOI:
Original Articles |
PHOTOINDUCED DEFECT OPTICAL ABSORPTION IN a-Si:H
WU Lei;HAN Daxing
Institute of Physics, Academina Sinica, Beijing
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WU Lei, HAN Daxing 1989 Chin. Phys. Lett. 6 181-184
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Abstract The photoinduced defect absorption in a-Si:H excited by bandgap light was studied. Energy position of light-induced metastable defects is different from that of native dangling bonds.
Keywords: 72.80Ng      72.20Jv      71 .25Mg     
Published: 01 April 1989
PACS:  72.80Ng  
  72.20Jv  
  71 .25Mg  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1989/V6/I4/0181
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