XPS STUDY OF ION IRRADIATED Cu/SiO<suB>2</suB> INTERFACES

Chin. Phys. Lett.

1989, Vol. 6

Issue (3): 135-137 DOI:

Original Articles

XPS STUDY OF ION IRRADIATED Cu/SiO₂ INTERFACES

LIU Jiarui;CHEN Zhengyuan;GUO Xiaodong*

Institute of Physics, Academia Sinica, Beijing *Institute of Aeronautical Materials, Ministry of Aeronautics and Astronautics, Beijing

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LIU Jiarui, CHEN Zhengyuan, GUO Xiaodong 1989 Chin. Phys. Lett. 6 135-137

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Abstract XPS study was carried out on Cu/SiO₂ interface following the irradiation of 6.0MeV Si ion beam. The chemical shift in the copper spectra reveals for the first time the existence of a chemically bonded structure in the interface region resulting from ion irradiation.

Published: 01 March 1989

PACS:	6820
	6848
	68.7340

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I3/0135

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