PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD

Chin. Phys. Lett.

1989, Vol. 6

Issue (12): 563-565 DOI:

Original Articles

PREPARATION AND CHARACTERIZATION OF HEAVILY DOPED μc-Si:F:H FILMS BY WINDOWLESS PHOTO-CVD

GUO shuwen^1,3;TAN shongsheng^1,2;WANG Weiyuan^1,2

¹Laboratories of Transducer Technology, Academia Sinica, Shanghai ²Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050 ³Department of Physics, Jiangxi University, Nanchang 320029

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GUO shuwen, TAN shongsheng, WANG Weiyuan 1989 Chin. Phys. Lett. 6 563-565

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Abstract A novel μc-Si:F:H film growth technique has been developed using a windowless photo-enhanced chemical vapor deposition (photo-CVD) system. The films contain of two phases with the microcrystallites embedded in amorphous materials. The films contain the crystallites with volume of fraction of 0.17-0.23 and average grain size of 32-85nm. The conductivity up to 16(Ω.cm)^-1 and gauge factor (GF) of about 12 are obtained.

Keywords: 81.l5.Gh 73.40.Ty 68.55.+b

Published: 01 December 1989

PACS:	81.l5.Gh
	73.40.Ty	(Semiconductor-insulator-semiconductor structures)
	68.55.+b

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I12/0563

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