TIME-RESOLVED PHOTOLUMINESCENCE FROM In<suB>x</suB>Ga<suB>1-x</suB>As/GaAs SINGLE QUANTUM WELL

Chin. Phys. Lett.

1989, Vol. 6

Issue (12): 559-562 DOI:

Original Articles

TIME-RESOLVED PHOTOLUMINESCENCE FROM In_xGa_1-xAs/GaAs SINGLE QUANTUM WELL

QIAN Shixiong;YUAN Shu;LI Yufen;T.G .Andersson¹;CHEN Zonggui²;PENG Wenji³;YU Zhenxin³

Department of Physics, Fudan University, Shanghai 200433 ¹Department of Applied Physics, Charlmers University of Technology, Sweden ²Institute of Semiconductor, Academia Sinica, Beijing, 100083 ³Institute of Laser Spectroscopy, Zhongshan University, Guangzhou 510275

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QIAN Shixiong, YUAN Shu, LI Yufen et al 1989 Chin. Phys. Lett. 6 559-562

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Abstract We have measured the time-resolved photoluminescence spectra of several In_xGa_1-xAs/GaAs single quantum well samples at 77K. The different temporal behaviors of the photoluminescence (PL) from the GaAs layer and the excitonic emission from the In_xGa_1-xAs well were obtained. The lifetime for the exciton in the In_xGa_1-xAs well were determined to be 110-170ps. The trapping efficiency of the well to the carriers was about 80%.

Keywords: 78.55.Cr

Published: 01 December 1989

PACS:

78.55.Cr

(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I12/0559

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	QIAN Shixiong
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	YU Zhenxin

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