NOVEL SEMICONDUCTOR SUBSTRATE FO-D BY HYDROGEN ION IMPLANTATION INTO SILICON

Chin. Phys. Lett.

1989, Vol. 6

Issue (10): 458-460 DOI:

Original Articles

NOVEL SEMICONDUCTOR SUBSTRATE FO-D BY HYDROGEN ION IMPLANTATION INTO SILICON

LI Jianming

Institute of Semiconductors, Academia Sinica, Beijing

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LI Jianming 1989 Chin. Phys. Lett. 6 458-460

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Abstract A high resistivity layer formed beneath the silicon surface by using protons implantation and two-step annealing is described. Experiment shows that the surface Hall mobility of top layer has increased by 26%. This novel substrate challenges to GaAs (advantages of speed) and opens a new road for the realization of very high speed integrated circuits.

Keywords: 61.70.Sk 61.70.At 66.30.Jt 72.80.Cw

Published: 01 October 1989

PACS:	61.70.Sk
	61.70.At
	66.30.Jt
	72.80.Cw	(Elemental semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1989/V6/I10/0458

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