Original Articles |
|
|
|
|
THE BEHAVIOR OF H AT THE AMORPHOUS SEMICONDUCTOR MULTILAYER INTERFACES |
WANG Shulin;CHENG Ruguang |
Shanghai Institute of Ceramics, Academia Sinica |
|
Cite this article: |
WANG Shulin, CHENG Ruguang 1988 Chin. Phys. Lett. 5 49-52 |
|
|
Abstract The H evolution spectra of a-Si:H/a-SiNx:H and a-Si:H/a-Si:H multilayers are reported. It is found that interface H evolution occurs at a higher temperature, which suggests that the interface-bonded H state is different from the bulk one.
|
Keywords:
49-52
|
|
Published: 01 February 1988
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|