Chin. Phys. Lett.  1988, Vol. 5 Issue (2): 49-52    DOI:
Original Articles |
THE BEHAVIOR OF H AT THE AMORPHOUS SEMICONDUCTOR MULTILAYER INTERFACES
WANG Shulin;CHENG Ruguang
Shanghai Institute of Ceramics, Academia Sinica
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WANG Shulin, CHENG Ruguang 1988 Chin. Phys. Lett. 5 49-52
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Abstract The H evolution spectra of a-Si:H/a-SiNx:H and a-Si:H/a-Si:H multilayers are reported. It is found that interface H evolution occurs at a higher temperature, which suggests that the interface-bonded H state is different from the bulk one.
Keywords: 49-52     
Published: 01 February 1988
PACS:  49-52  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1988/V5/I2/049
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CHENG Ruguang
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