Chin. Phys. Lett.  1987, Vol. 4 Issue (6): 283-285    DOI:
Original Articles |
PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY
TANG Yinsheng;JIANG Desheng*
University of Science and Technology of China, Hefei *Institute of Semiconductors, Academia Sinica, Beijing
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TANG Yinsheng, JIANG Desheng 1987 Chin. Phys. Lett. 4 283-285
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Abstract Room temperature photoreflectance were made on a selectively doped GaAs/n-AlXGa1-XAs two-dimensional electron gas grown by molecular beam epitaxy (MBE). The lineshapes can be made fit by Aspnes' theory, and the results explained with a simple model.
Published: 01 June 1987
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