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ANNEALING DYNAMIC BEHAVIOR OF Rh ENERGY LEVELS IN n-Si SAMPLES |
| ZHOU Jie;JI Xiujiang;LI Shuying;LIN Xulun* |
| Institute of Semiconductor, Academia Sinica, Beijing
*Department of Physics, Peking University, Beijing |
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| Cite this article: |
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ZHOU Jie, JI Xiujiang, LI Shuying et al 1987 Chin. Phys. Lett. 4 565-568 |
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Abstract The results of annealing behavior of Rh energy levels in n-Si are presented. Two energy levels E(0.31) and E(0.58) are observed. According to the generation and growth rules of these levels and their equal concentration, it is supposed that the two levels are related to the atoms of Rh, and they belong to the same center, but their charged states are different.
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Published: 01 December 1987
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