Chin. Phys. Lett.  1987, Vol. 4 Issue (10): 477-479    DOI:
Original Articles |
PHOTOREFLECTANCE STUDY OF GaAs/AlGaAs MULTI-QUANTUM WELLS
TANG Yinsheng*;JIANG Desheng;ZHUANG Weihua;CHEN Zhonggui
Institute of Semiconductors, Academia Sinica, Beijing *University of Science and Technology of China, Hefei
Cite this article:   
TANG Yinsheng, JIANG Desheng, ZHUANG Weihua et al  1987 Chin. Phys. Lett. 4 477-479
Download: PDF(48KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Using photoreflectance (PR) at room temperature, we have studied GaAs/AlGaAs multi-quantum wells(MQWs) grown by molecular beam epitaxy. Analysis shows that the modulation mechanism of PR of MQWs is Stark shift of the subbands produced by photo-injection of carriers, which has first derivative functional lineshapes. By fitting the experimental spectra, an unusual transition coming from the interfaces in MQWs was observed.
Published: 01 October 1987
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y1987/V4/I10/0477
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
TANG Yinsheng
JIANG Desheng
ZHUANG Weihua
CHEN Zhonggui
Viewed
Full text


Abstract