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TDPAC STUDY ON ANNEALING BEHAVIOR OF In IN Si AFTER RECOIL IMPLANTATION |
| ZHU Shengyun;LI Donghong;LI Yuexin |
| Institute of Atomic Energy, Beijing |
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| Cite this article: |
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ZHU Shengyun, LI Donghong, LI Yuexin 1987 Chin. Phys. Lett. 4 469-472 |
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Abstract Si wafer (N-type, P-doped, 1kΩ-cm) was implanted with 111In by nuclear reaction recoils. Thermal annealing behavior of In in Si was studied by the time differential perturbed angular correlation technique. It is found that after 798°C annealing 55% of the In atoms occupy substitutional lattice sites in Si with the remainder in perturbed sites.
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Published: 01 October 1987
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